Abstract
This paper presents a systematic study of the effect of source/drain (S/D) implant lateral straggle on the RF performance of the symmetric and asymmetric underlap double gate (UDG) MOSFET devices. The length of the underlap regions ( L \({}_{un}\) ) on each side of the gate is a critical technology parameter in determining the performance of UDG-MOSFETs. However, the value of L \({}_{un}\) is susceptible to variation due to S/D implant lateral diffusion. Therefore, it is critical to investigate the impact of S/D implant lateral straggle on the performance of UDG-MOSFETs. This paper shows that the improvement in the RF performance of the UDG-MOSFETs over the conventional DG-MOSFETs can be achieved by optimizing the S/D lateral straggle of the asymmetric UDG-MOSFETs. The RF performance study includes intrinsic capacitances and resistances, transport delay, inductance, and the cut-off frequency.
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