Abstract
Ultra-high definition displays have become a trend for the current flat plane displays. In this study, the contact properties of amorphous silicon–tin oxide thin-film transistors (a-STO TFTs) employed with source/drain (S/D) electrodes were analyzed. Ohmic contact with a good device performance was achieved when a-STO was matched with indium-tin-oxide (ITO) or Mo electrodes. The acceptor-like densities of trap states (DOS) of a-STO TFTs were further investigated by using low-frequency capacitance–voltage (C–V) characteristics to understand the impact of the electrode on the device performance. The reason of the distinct electrical performances of the devices with ITO and Mo contacts was attributed to different DOS caused by the generation of local defect states near the electrodes, which distorted the electric field distribution and formed an electrical potential barrier hindering the flow of electrons. It is of significant importance for circuit designers to design reliable integrated circuits with SnO2-based devices applied in flat panel displays.
Highlights
Amorphous oxide semiconductor thin-film transistors (AOS-TFTs) as candidates for silicon-based TFTs have come into the spotlight of flat panel display (FPD) because of their low processing temperature, high transparency, high carrier mobility, and good uniformity [1,2,3]
In 2012, the implementation of mass production of FPD with the amorphous In–Ga–Zn–O (a-IGZO) TFT backplane was a milestone for the development of AOS-TFTs [4]
A 300-nm-thick Al–Nd alloy (3 wt % of Nd) as gate metal was deposited by direct current (DC) magnetron sputtering, and its patterns were defined by photolithography
Summary
Amorphous oxide semiconductor thin-film transistors (AOS-TFTs) as candidates for silicon-based TFTs have come into the spotlight of flat panel display (FPD) because of their low processing temperature, high transparency, high carrier mobility, and good uniformity [1,2,3]. Compared to the ESL configuration, a TFT with a back-channel-etched (BCE) structure is preferable to achieve the miniaturized fabrication of the AOS device. In AOS devices, the subgap DOS is an important parameter which plays a major part in controlling the mobility, operation voltage, and subthreshold swing of TFTs [10].
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