Abstract
Effects of electron irradiation-induced deep level defects have been studied on both n/p and p/n Indium Phosphide (InP) solar cells with very thin emitters. The simulation results reveal that the n/p structure offers a somewhat better short-circuit current and that the p/n structure renders an improved open-circuit voltage, not only before electron irradiation but also after 1 MeV electron irradiation with 5×1015 electrons per cm2 fluence. Further, the calculated findings highlight that the n/p solar cell structure is more resistant than that of a p/n structure.
Highlights
Research into space solar cells has progressed rapidly over the last couple of decades
The numerical calculations were carried out to solve equations (1) to (4) in the case of both the p/n and n/p junctions, before irradiation and taking into consideration the modifications engendered by a 1 MeV electron irradiation at 5×1015 electrons per cm2 fluence on an Indium Phosphide (InP) solar cell
It was noted that the optimum n/p solar cell structure was more efficacious than the optimum p/n solar cell structure on account of a larger short-current density which is in agreement with the outcomes of reference [11]
Summary
Research into space solar cells has progressed rapidly over the last couple of decades. Developments have been focused on Indium Phosphide solar cells (InP) for the reason that their radiation tolerance surpasses that of the GaAs and Si ones as reported in variant studies [1, 3, 4]. They have several other advantages like a high-efficiency, a thin-film structure, a high-temperature operation and a simple cell structure [5, 6]. InP cells appear as very attractive materials for space solar cells as of late, elevated conversion efficiencies exceeding 29.2% (AM0 at 25°C) have been achieved [7]. It has been demonstrated that InP solar cells exhibit relatively low levels of performance degradation for both proton and electron irradiation [1, 7]
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