Abstract
Comparative experimental data, using dynamic light scattering methods, scanning electron and atomic force microscopy, on the composition, crystal structure, semiconductor and photoelectric properties of PbSe films deposited at the presence of sodium sulfite Na2SO3 and “sodium sulfite–ascorbic acid” complex antioxidant additive are presented. Significant changes in morphology, elemental and phase composition, the period of the crystal lattice of PbSe films been synthesized in the presence of Na2SO3 and Na2SO3 + C6H8O6 anti-oxidants before and after their thermoactivation at 653 K are found. It is shown that the introduction of a complex additive in comparison with Na2SO3 increases the homogeneity of the particles forming the layer, decreases the microstresses in it, reduces the value of thermal band gap from 0.349 to 0.308 eV, and increases the volt-watt sensitivity of the films by 28–30%.
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