Effect of Sn doping on the structure, magnetism and thermal expansion of Mn3Ga1−xSnxN (x = 0.1, 0.3, 0.5 and 0.7) compounds

Abstract

The Sn-doped Mn3Ga1−xSnxN compounds were prepared by solid-state sintering methods. The negative thermal expansion (NTE) performance and correlated structure and magnetism were investigated. A near zero thermal expansion (ZTE) behavior for Mn3Ga0.3Sn0.7N, exhibiting a coefficient of thermal expansion (CTE) of − 0.45 × 10−6 K−1 in a temperature range from 480 to 513 K, was discovered. The ZTE mechanism is proposed based upon the temperature dependence of dM/dT with respect to various Sn contents. The present ZTE material is probably regarded as a promising candidate for fabricating precision devices used far from ambient temperature circumstance.