Abstract
The Sn-doped Mn3Ga1−xSnxN compounds were prepared by solid-state sintering methods. The negative thermal expansion (NTE) performance and correlated structure and magnetism were investigated. A near zero thermal expansion (ZTE) behavior for Mn3Ga0.3Sn0.7N, exhibiting a coefficient of thermal expansion (CTE) of − 0.45 × 10−6 K−1 in a temperature range from 480 to 513 K, was discovered. The ZTE mechanism is proposed based upon the temperature dependence of dM/dT with respect to various Sn contents. The present ZTE material is probably regarded as a promising candidate for fabricating precision devices used far from ambient temperature circumstance.
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