Abstract
Abstract The Tin doped Tungsten oxide (Sn0.26WO3) thin films were deposited on glass substrates at the substrate temperature of 500°C with different doping concentration (0, 5, 10 and 15%) and the doping concentration has been optimized at 15%. The X-ray diffraction indicates that all the films are polycrystalline nature with monoclinic structure. Surface morphology and compositional variation were studied by SEM and EDAX studies and the results were presented. The average grain size was found to be 43 nm for the film deposited at 15% Sn doped film. The average transmittance for all the films deposited at 500°C is greater than 80% in the visible region. The band gap for Sn0.26WO3films lies between 2.3 to 2.7 eV. The Keithley Electrometer was used to measure the electrical parameters and the junction characteristics of n-Sn0.26WO3/p-Si diode were measured.
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