Abstract
Tin doped zinc sulfide (ZnS:Sn) thin films have been fabricated by sol-gel dip-coating method on glass and p-Si substrates by varying Sn concentration between 0 wt % and 10 wt %. The structural and optical properties of ZnS:Sn thin films have been studied by X-ray diffraction and spectrophotometer measurements. X-ray results show the films grown on glass and p-Si substrate are cubic structure. Optical band gap values found from the transmittance spectra have decreased from 3.58 eV to 3.42 eV with the addition of Sn. The effect of tin concentration on the device performance of ZnS:Sn/p-Si has been investigated through the analysis of the I–V characteristics under dark and illuminated conditions. Diode parameters such as ideality factor n, barrier height Φb, saturation current Io, series resistance value RS have been calculated by means of thermionic emission theory, and Norde method. Photosensitivity PS, photoresponsivity R, and detectivity D values of the diodes have been determined from I–V measurements under 100 mW/cm2 illumination intensity. It has been determined that 3% Sn doped ZnS/p-Si diode showed the best diode and photodiode properties among Sn doped ZnS/p-Si diodes.
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