Abstract
The preparation of Cu2ZnSnSe4 (CZTSe) thin films by the selenization of an electrodeposited copper–tin–zinc (CuSnZn) precursor with various Sn contents in low-pressure Se+SnSex vapor was studied. Scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) measurements revealed that the Sn content of the precursor that is used in selenization in a low-pressure Se+SnSex vapor atmosphere only slightly affects the elemental composition of the formed CZTSe films. However, the Sn content of the precursor significantly affects the grain size and surface morphology of CZTSe films. A metal precursor with a very Sn-poor composition produces CZTSe films with large grains and a rough surface, while a metal precursor with a very Sn-rich composition procures CZTSe films with small grains and a compact surface. X-ray diffraction (XRD) and SEM revealed that the metal precursor with a Sn-rich composition can grow a thicker MoSe2 thin film at CZTSe/Mo interface than one with a Sn-poor composition, possibly because excess Sn in the precursor may catalyze the formation of MoSe2 thin film. A CZTSe solar cell with an efficiency of 7.94%was realized by using an electrodeposited metal precursor with a Sn/Cu ratio of 0.5 in selenization in a low-pressure Se+SnSex vapor.
Highlights
Earth-abundant and non-toxic light absorber materials, such as Cu2 ZnSn(Sx Se1 ́x )4 (CZTSSe), are attractive for use in the Tera-Watt scale production of thin film solar cells that have adjustable bandgaps of between 1.0 to 1.5 eV and a theoretical efficiency of 30% [1,2,3,4,5,6,7,8,9,10,11,12]
Severe tin (Sn) loss is commonly observed during high-temperature selenization in the preparation of CZTSe films [16,17,18]
A thick MoSe2 film at CZTSe/Mo interface is observed following the selenization of the metal precursor that contains excess Sn [13]
Summary
Earth-abundant and non-toxic light absorber materials, such as Cu2 ZnSn(Sx Se1 ́x ) (CZTSSe), are attractive for use in the Tera-Watt scale production of thin film solar cells that have adjustable bandgaps of between 1.0 to 1.5 eV and a theoretical efficiency of 30% [1,2,3,4,5,6,7,8,9,10,11,12]. This study investigates CZTSe films that are prepared by the selenization of the metal precursor with various Sn contents in low-pressure Se+SnSe vapor atmospheres, with a focus on the relationship between the Sn content and the formation of MoSe2 films
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