Abstract
Chemical mechanical polishing of copper is examined experimentally and theoretically as a function of slurry flow rate and the product of applied wafer pressure and relative sliding speed It is observed that under constant tribological conditions, the removal rate at any fixed value of generally decreases as slurry flow rate increases. The increased cooling of the wafer surface, as a result of increased slurry flow rate, is used to explain this reduction in the reaction rate. At a fixed flow rate, it is further observed that removal rate does not necessarily increase monotonically with The rate instead depends on the particular values of pressure and velocity, regardless of the fact that they may result in the same value of This dependence is shown to be caused by changes in the coefficient for convective heat-transfer between the wafer and the slurry, as well as the heat partition factor, which determines the fraction of the total frictional power that heats the wafer. Results further indicate that trends in copper removal rate can be adequately explained with a Langmuir-Hinshelwood kinetics model with both mechanical and chemical rate components. © 2004 The Electrochemical Society. All rights reserved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
