Abstract
Effect of SiO2 Thickness Variation on Threshold Voltage and Trans-Conductance of TFT
Highlights
Oxide-based thin film transistors have been investigated for a number of applications, including switching components in flat panel display backplanes, gas sensor applications, and UV detecting devices
Thin film transistors are made by depositing a thin layer containing a dielectric material on a variety of substrates, such as plastic, fibre, paper, and silicon [1,2,3], and removing it
We investigated TFT using 2-D device simulation and reported the effect of dielectric SiO2 thickness on electrical parameters threshold voltage and transconductance of indium–gallium–zinc oxide (IGZO) based TFT
Summary
Oxide-based thin film transistors have been investigated for a number of applications, including switching components in flat panel display backplanes, gas sensor applications, and UV detecting devices. Transparent thinfilm transistors using indium–gallium–zinc oxide (IGZO) active channel layers have gained popularity in recent years because to their low threshold voltage, high transconductance, and greater Ion/Ioff current ratio. Because of their optimum threshold voltage and high transconductance, these transistors offer excellent switching properties. The choice of gate dielectric materials that fit the thin layer of semiconductor materials is an analytic problem for improving the electrical properties of TFTs [12,13]. We investigated TFT using 2-D device simulation and reported the effect of dielectric SiO2 thickness on electrical parameters threshold voltage and transconductance of IGZO based TFT
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