Abstract
Effects of SiO 2 encapsulation and rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs single quantum well (SQW) were studied by low temperature photoluminescence (PL). A blueshift of the PL peak energy for both the SiO 2 -capped region and the bare region was observed. The results were attributed to the nitrogen reorganization in the GaNAs/GaAs SQW. It was also shown that the nitrogen reorganization was obviously enhanced by SiO 2 cap-layer. A simple model [1] was used to describe the SiO 2 -enhanced blueshift of the low temperature PL peak energy.
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