Effect of single-particle correlation on the spectrum of generation and recombination noise in semiconductors

Abstract

The power spectral density of generation–recombination noise in finite-length semiconductors is calculated under the drift–diffusion approximation taking into full account the effect of diffusion on the single-particle correlation. The result is compared with the prediction of the usual approach in which such an effect is not considered. The low frequency behaviour of the power spectral density, its cut-off frequency and the noise variance are studied as a function of the applied voltage and the generation–recombination time constant.