Abstract
The effect of a SiN x coating was investigated in lateral solid phase epitaxy (L-SPE) of implanted amorphous Si (a-Si) films. It was found that the L-SPE growth rate decreased with increasing thickness of the SiN x film. The internal stress of a-Si films derived from the change of the growth rate was on the order of 5 × 10 9 dyn/cm 2. A model to explain these phenomena is presented.
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