Abstract
This study reports the fabrication of InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with different Si-doped concentration in GaN barrier layers. The light output power and electrostatic discharge (ESD) characteristics of the LEDs improved as Si-doped concentration in GaN barrier layers increased. This result is attributed to the improvement in hole confinement by doping silicon in the GaN barriers. The light intensity of the LED with a 2 × 1018/cm3 silicon doping barrier layer was less sensitive to elevated temperature.
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