Abstract
In this study, the casting method was used to prepared PMMA/Si3N4/TaC nanocomposites with variant content (0,2,4,6,8) % wt of Si3N4/TaC nanoparticles. The structural and electrical properties have been investigated. Scanning electron microscope (SEM) indicate that the homogenous, smooth and dispersed of Si3N4 and TaC NPs inside the PMMA matrix due to strong covalent interaction between the Si3N4 and TaC NPs in the PMMA matrix which mean a good method for prepared films. Optical microscope images explained that when increasing in content of nanoparticles that forming network paths inside the polymeric matrix that act as charge carriers. FTIR spectra indicate to a physical interference between the polymer matrix and nanoparticles. The AC electrical properties of nanocomposites obtained that the dielectric constant and dielectric loss rise with rising content of nanoparticles and decrease with rising frequency of applied electric field. While the A.C electrical conductivity rise with rising the frequency and weight content of Si3N4/TaC nanoparticles. This results indicated that the PMMA/Si3N4/TaC nanostructures can be considered as promising materials for electronics and electrical nanodevices.
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