Abstract
We have studied the effect of 3p electron doping on the unusual antiferromagnetic (AFM) order in the Kondo semiconductor CeRu2Al10 with TN = 27 K by measuring the magnetic susceptibility χ, specific heat C, and electrical resistivity ρ for polycrystalline samples of CeRu2Al10−ySiy. The large decrease in the absolute value of paramagnetic Curie temperature |θP| with increasing y indicates the suppression of c–f hybridization. The thermal activation behavior in ρ(T) above TN disappears for y ≥ 0.3 and TN decreases to 12 K for y = 0.38. These systematic changes in |θP|, ρ(T), and TN coincide with those reported in the 4d-electron doped system Ce(Ru1−xRhx)2Al10 with respect to the number of doped electrons per formula unit. This coincidence indicates that the Al 3p- and Ru 4d-electrons in CeRu2Al10 play the equivalent role in both the formation of hybridization gap and the unusual AFM ordering.
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