Abstract
We have studied the effects of Si doping on the near infrared (NIR) luminescence observed in low Bi doped ( 0.1mol% ) glasses and the energy transfer from Yb3+ to Bi. The broadband near infrared can only be observed when Si is introduced in the Bi-doped glass. The origin of this fluorescence can be attributed to Bi ions at low valence. Efficient energy transfer from Yb3+ to Bi NIR active ions is achieved by co-doping of Si. There is an increment of about ~29 times of the emission intensity from Bi-related active center as the Yb3+ concentration varies from 0 to 2.0mol% and the amount of Si is 0.05mol% under 980nm excitation. The possible mechanism of energy transfer from Yb3+ to Bi is also discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
