Abstract
AbstractWe have performed molecular dynamics (MD) simulations to investigate the effect of SiC bond formation on fluence‐dependent results in 20 keV C60 bombardment of Si. Sputter depth profiling experiments of C60 on Si have produced atypical results, which are thought to be caused by the strong covalent bonds that are formed between the C atoms in the projectile and Si atoms in the substrate. A recently developed scheme developed by Russo, et al.8 has been adapted to perform MD simulations of 150 successive impacts of 20 keV C60 on Si, which corresponds to a total fluence of 2.64 × 1013 impacts/cm2. In order to isolate the effects of SiC bond formation, the same set of trajectories is calculated with and without the attractive SiC potential energy terms. When SiC bonds are able to form, nearly all the C atoms from the projectile are incorporated into the substrate. When the possibility of SiC bond formation is removed, most of the C atoms are backscattered into the vacuum. The cumulative result is that the substrate with SiC bonds contains a factor of twenty times more C atoms, which are located below the surface. Copyright © 2010 John Wiley & Sons, Ltd.
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