Effect of Si δ-doped layer position on optical absorption in GaAs quantum well under hydrostatic pressure

Abstract

In this paper, the effects of hydrostatic pressure, the position and the concentration of Si δ-doped layer on the intersubband transitions and absorption lineshape in GaAs quantum well are studied. The electron energy structure and the optical absorption coefficient are calculated by solving Poisson and Schrödinger equations self-consistently. The obtained theoretical results show that the energy differences between the consecutives levels, the confining potential and the optical absorption coefficient depend not only on the hydrostatic pressure but also on the Si δ-doped layer position. Especially, we have found that the optical absorption coefficient can be red or blue shifted by moving the Si δ-doped layer from the middle of the quantum well to the interface with the quantum barrier. This behavior in optical absorption gives us a new degree of freedom in different device applications based on electronic transitions.