Abstract

In this report, we have investigated the effect of SHI on the electronic structure and electrical transport properties of strained LaCoO3 (LCO) thin films deposited on SrTiO3 (STO) substrate. XANES study revealed changes in electronic distribution and transition metal (TM) 3d-O2p ion hybridization in SHI irradiated thin film. Both pristine, as well as irradiated LCO thin film, have been found to have semiconducting behavior in the whole temperature range. Further, SHI irradiation observed to increase the electrical resistivity of thin-film, a possible cause for this has been discussed in the light of XANES result

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call