Effect of separate confinement hetero-structure layer on tunnel injection transistor laser-based transmitter for high-speed optical communication networks

Abstract

Transistor Laser has already established as a promising candidate for high speed optical interconnects and optical telecommunication networks. The present work is focused on the performance of multiple quantum wells (MQW) based transistor laser by incorporating tunnel injection phenomenon and it’s performance by varying the width of the separate confinement heterostructure layer. The virtual state (VS) is assumed as a path for the movement of injected charge carriers from bulk to nanostructures. We have estimated the various characteristics such as base threshold current, light power output, and optical modulation response by considering various physical parameters such as diffusion time, gain compression factor, optical confinement factor, photon lifetime, tunneling time and diffusion length, as a function of separate confinement hetero-structure (SCH) layer thickness. It is found that with increasing thickness of the SCH layer, base threshold current reduces, the light output power increases, but the optical modulation response remains almost constant, which ensures the potentiality of the proposed structure for high speed opto-electronic transmitter with low power consumption.