Abstract
In this work, the effect of self-heating on small-signal parameters of In0.53Ga0.47As based gate-all-around nanowire MOSFETs is explored using thermally calibrated simulation results. The effects of interfacial thermal resistance (ITR) of Al2O3/In0.53Ga0.47As interface, the number of nanowires (N), and ambient temperature on RF performance metrics such as transition frequency , max-oscillation frequency , intrinsic current gain , power gain (maximum available gain/maximum stable gain), and transconductance are thoroughly investigated in order to assess the self-heating induced degradation. The impact of self-heating has also been observed on small-signal parameters such as C gd, C gs, R gd, R gs, and τ. Transition frequency and maximum oscillation frequency decrease significantly when lattice temperature rises because of self-heating. The order of ITR for Al2O3/In0.53Ga0.47As interface has been reported to be in the technical literature. Increasing ITR from 10−5 to decreases f t and f max by 12 and 70 GHz, respectively.
Published Version
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