Effect of selenization temperature on the physical properties of Cu2SnSe3 thin films

Abstract

Cu2SnSe3 thin films were prepared by the two-stage process (metal layers deposited by direct current-sputtering + selenization of metal layers by rapid thermal annealing). The effect of selenization temperature (350 °C–550 °C) on the physical properties of Cu2SnSe3 was investigated thoroughly. The formation of single-phase Cu2SnSe3 was confirmed by the X-ray diffraction patterns of the selenized films at 550 °C. The Raman modes at 181 cm−1 and 231 cm−1 confirmed the formation of single-phase Cu2SnSe3 at 550 °C and the presence of secondary phase identification was also investigated. The compositional and morphological analysis was investigated using energy-dispersive X-ray spectrometer and field emission scanning electron microscopy measurements, respectively. The optical properties of selenized films were measured by the ultraviolet-visible spectroscopy and the calculated results showed the bandgap values in the range 0.9–1.44 eV. The Hall Effect measurement showed that the values of carrier concentration were decreased and the resistivity was increased with increasing of selenization temperature.