Abstract
Compositional dependent investigations of the bulk GeTe chalcogenides alloys added with different selenium concentrations are carried out by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), electron probe micro-analyzer (EPMA) and differential scanning calorimetry (DSC). The measurements reveal that GeTe crystals are predominant in alloys up to 0.20at.% of Se content indicating interstitial occupancy of Se in the Ge vacancies. Raman modes in the GeTe alloys changes to GeSe modes with the addition of Se. Amorphousness in the alloy increases with increase of Se and 0.50at.% Se alloy forms a homogeneous amorphous phase with a mixture of Ge–Se and Te–Se bonds. Structural changes are explained with the help of bond theory of solids. Crystallization temperature is found to be increasing with increase of Se, which will enable the amorphous stability. For the optimum 0.50at.% Se alloy, the melting temperature has reduced which will reduce the RESET current requirement for the phase change memory applications.
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