EFFECT OF SEEDING FILM TYPE ON MORPHOLOGY AND ELECTRICAL PROPERTIES OF Ga-DOPED ZnO NANOSTRUCTURES GROWN BY HYDROTHERMAL PROCESS

Abstract

In the present work, we are interested in modifying the structures and electrical properties of Ga-doped ZnO (GZO) nanostructures by incorporation of Ga and F elements into ZnO seeding films. The ZnO, Ga-doped ZnO and F-doped ZnO thin film layers were grown by sol–gel dip coating onto glass substrates. The GZO nanostructures were grown by hydrothermal method starting from zinc nitrate and gallium (III) nitrate hydrate with a crystal growth assistance using the different types of seeding film layers. The X-ray diffractometer (XRD) and field emission scanning electron microscope (FE-SEM) are observe for the crystal structures and surface morphologies of GZO nanostructures. The changes in electrical resistance of the GZO nanostructures due to the different seeding layers were analyzed by the four-point probe technique. It is shown that the structural and electrical properties are found to be affected by the types of seeding layers.