Abstract
This study investigates the effect of secondary phases microstructure on mechanical and dielectric properties in beta silicon aluminum oxy-nitride (β-SiAlON) produced by pressureless sintering at temperatures of 1650 °C–1750 °C from a mixture of silicon nitride (Si3N4), alumina (Al2O3), aluminum nitride (AlN) and yttrium oxide (Y2O3). β-SiAlON obtained at and above 1700 °C sintering temperature, which showed a fully dense structure with a good combination of hardness and strength of 21–23 GPa and 870–890 MPa, respectively. Surprisingly, the dielectric constant of β-SiAlON was found to increase significantly from 6.4 to 8.2 with an increase in the sintering temperature from 1700 to 1750 °C. Transmission electron microscopy revealed the presence of secondary crystalline phase yttrium rich silicon aluminum oxynitride in the specimen sintered at 1750 °C , whereas yttrium rich amorphous interface structure was found in the specimen sintered at 1700 °C, suggesting the importance of controlling grain boundary structures in β-SiAlON.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.