Abstract
The conversion efficiency of CIGS cells fabricated with three stage co-evaporation process was improved by regulating the Se beam flux rate. When the Se beam flux rate was 15 A/s or less, the surface of CIGS was uniform and it showed tightly connected structure and facet shape structure. However pits and crevices were found on the surface in the condition of Se beam flux rate above 15 A/s, which caused an increase in the leakage current. The best CIGS solar cell was obtained at the Se beam flux rate of 15 A/s and it had the following photovoltaic parameters: conversion efficiency of 17.57%, Jsc = 36.48 mA/cm2, Voc = 0.655 V and FF = 73.5% in an active area of 0.45 cm2. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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