Abstract
We obtain analytical results on the effect of screening on electron–phonon (e-p) relaxation rate in single-layer graphene (SLG) placed on any substrate using the Boltzmann transport formalism (BTF). The screening has been taken into account through the Thomas-Fermi (TF) and Random Phase Approximation (RPA) model. The four intrinsic and extrinsic phononic modes considered for electron-phonon scattering are the acoustic, optic, surface polar acoustic (piezoelectric), and surface polar optic (SO) phonons. All the four considered phononic modes coupling with free carriers provide significant pathways for e-p relaxation. We further investigate the significance of screening in the four phononic modes in electron energy-dependent e-p relaxation rate in SLG on GaAs substrate in particular. The obtained screened analytical solutions are novel and are not reported elsewhere.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
