Effect of Sb2S3 sacrificial layer thickness on structural, optical and electrical properties of CuSbS2 films and investigation of diode parameters of CuSbS2/CdS heterojunctions

Abstract

The ternary copper chalcogenides CuSbS2 (CAS) is found to have appealing optical and photovoltaic properties to be used as absorber layer in thin film solar cells. However, the difficulty to grow good quality CuSbS2 layer of micrometer thickness by chemical bath deposition method holds a big challenge. In this work, we reported the effect of incorporating Sb2S3 sacrificial layer of different thickness on structural, optical and electrical properties of CAS films. The X-ray diffraction results and Raman spectroscopic analysis confirm the formation of single-phase orthorhombic crystal structure for CuSbS2. The increase of Sb content in CAS films with the increase in deposition time of Sb2S3 layer has been reflected in the change in relative intensity ratio of characteristic Raman peaks as well as in diffraction peak profiles. The magnitude of defect states in terms of Urbach energy is decreased drastically by increasing Sb percentage in the films. A clear improvement in electrical properties of CAS films is observed with the decrease in Cu/Sb ratio. The carrier density is increased by one order of magnitude from 1016 to 1017 cm−3 and hole mobility increases from 1.14 to 4.87 cm2/Vs. The impact of Sb concentration on Scottky diode parameters of CAS/CdS heterojunction was studied by using thermionic emission model. Both the ideality factor and series resistance are decreased with the increase in Sb content. The J-V measurements reveal that the integration of Sb2S3 sacrificial layer improves the PV parameters such as fill factor, open circuit voltage, photocurrent and efficiency. The overall improvement in diode parameters can be ascribed to decrease in defect states, better film quality, absorber layer thickness and improved stoichiometry of CAS films.