Abstract
Heavily Sn-doped GaAs1-xSbx epitaxial films were grown on SI-GaAs (001) substrates by solid source molecular beam epitaxy. A 5 nm-thick AlSb buffer layer was employed to relax the lattice mismatch between the epilayer and the substrate. X-ray diffraction (XRD), Hall effect measurements and photoluminescence measurements were performed to characterize the epitaxial films. The heavily Sn-doped GaAs1-xSbx / AlSb films with x ≤ 0.24 indicated n-type conduction while the epitaxial films with x ≥ 0.43 indicated p-type conduction. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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