Abstract
We studied resistance switching characteristics of ruthenium oxide (RuOx)/niobium-doped strontium titanate (Nb:STO) contact. With increasing oxygen content of oxide electrode, the resistance window was improved. The switching speed of RuOx electrode also showed improvement compared to platinum (Pt) electrode. The RuOx film contains amorphous phase and also forms an interface oxide layer at the RuOx/Nb:STO contact, which suggests defect generation near the interface. Additionally, the interface reaction disturbs the crystalline orientation of Nb:STO. These defect sites facilitate switching properties by easy drift of current and oxygen ion and also by modulation of barrier height.
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