Abstract
The effect that a longitudinal magnetic field exerts on the transverse negative magnetoresistance by suppressing the interference quantum correction is studied in GaAs/InxGal−x As/GaAs structures with a single quantum well. It is shown that the variation in the shape of the transverse magnetoresistance curve caused by a longitudinal magnetic field depends strongly on the relation between the mean free path, the phase-breaking length, and the correlation length characterizing the roughness of the two-dimensional layer. It is shown that the experimental results allow one to estimate the parameters of large-scale and small-scale roughness of the two-dimensional layer in the structures under study. The results obtained are in good agreement with the data of probe microscopy.
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