Abstract
The green InGaN-based resonant cavity light-emitting diodes (RCLEDs) on Si substrates were fabricated using laser liftoff and wafer bonding techniques. Five-pair TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> --SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> distributed Bragg reflectors (reflectivity: 85%) and an Ag metal layer (reflectivity: 99%) were employed as the top and bottom mirrors, respectively. The light output power of the RCLED at room temperature is 1.5 times the magnitude of a similar structure without a resonant cavity at an injecting current density of 600A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The mode spectrum exhibits a line width of approximately 5.5 nm at the dominant peak wavelength of 525 nm, which indicates a quality factor of 100. Under various injection current densities, a low thermally induced red shift in the 525-nm emission peak was observed. This indicates that the resonant microcavity effect contributes to the stability of electroluminescence emission wavelength
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