Abstract
Electron beam (EB) lithography is indispensable for the fabrication of photomasks including extreme ultraviolet masks. With the miniaturization of electronic devices, the requirement for photomasks becomes severe. When the feature size was decreased, the resist patterns collapse due to the surface tension of liquid. The decrease of resist film thickness is required for the high-resolution patterning in order to avoid pattern collapse. However, the quality of resist patterns is known to be degraded. In this study, the resist film thickness dependence of the pattern formation of a chemically amplified electron beam resist on chromium nitride substrate was investigated.
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