Abstract
ABSTRACT La0.7Ga0.3Fel-xTixO3 (x = 0, 0.1, 0.2, and 0.3) polycrystalline compounds were successfully prepared using the solid–solid process. The structural study proves that the samples are centrosymmetric at room temperature. From admittance spectroscopy, it is shown that the frequency dependence of conductivity is correctly fitted by the empirical Jonscher's law, implying a semiconductor behavior. The microstructure contribution into conductivity is discussed based on grain and grain boundary response in a wide frequency range. The activation energy of the conduction process was deduced. Then, mobile carriers can travel over neighboring and distant sites by the hopping process. According to the impedance analysis, just a single relaxation phenomenon is noticed. The magnitude of capacitance confirms the microstructure effect with ferroelectric feature. Dielectric study proves that the permittivity rise results mainly from interfacial and orientational polarizations.
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