Abstract
In order to predict more accurately the current gain behaviour of HBTs at low collector current region, surface recombination and interface recombination have to be considered. Recombination current has been obtained by the combination of bulk recombination in the neutral base, interface recombination at the heterointerface, space charge recombination, and surface recombination components. Results from the present model have been compared with experimental results, and the most recent analytical models for abrupt and graded heterojunction bipolar transistors (HBTs). The study shows that this model can predict the device gain more accurately.
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