Abstract
Rb doped 0.94Bi0.5Na0.5TiO3–0.06BaTiO3 (BNT–BT–Rbx) thin films with xmol% Rb (x=0, 2.5, 5, 7.5, 10) were deposited on Pt/Ti/SiO2/Si substrate by metal-organic solution deposition method. Experiments were conducted to investigate the effect of Rb doping on phase formation, microstructure, leakage current, and the resulting ferroelectric and piezoelectric property. It was found that substantial enhancement in structural, morphological and electrical properties can be achieved by Rb doping of BNT–BT thin films. Optimal electrical properties were obtained for 5mol% Rb doped BNT–BT thin films, with a dielectric constant, remnant polarization, and effective piezoelectric constant of ∼681, ∼28.9μC/cm2 and ∼86pm/V, respectively. It was suggested that the enhanced electrical properties in the case of 5mol% Rb BNT–BT thin films can be attributed to domain wall movement induced by A-site substitutions, large grain size, and lattice distortion.
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