Effect of Rashba and Dresselhaus spin-orbit interactions on a D0 impurity in a two-dimensional Gaussian GaAs quantum dot in the presence of an external magnetic field

Abstract

Abstract The binding energy of a hydrogenic-like donor complex D 0 placed in a two-dimensional Gaussian quantum dot GaAs semiconductor is determined incorporating the Rashba and Dresselhaus spin-orbit interactions in the presence of an externally applied magnetic field. A unitary transformation is employed to deal with the spin-orbit interactions and their effects are incorporated up to second order in the coupling coefficients. The resulting Hamiltonian is solved variationally using a simple wave function. The results indicate that the Rashba spin-orbit interaction and the confining potential reduce the energy of the donor complex whereas the magnetic field enhances it. Interestingly enough, the binding energy is enhanced by the Dresselhaus spin-orbital interaction in the presence of a magnetic field and while it is reduced in the absence of it. Finally we study the effect of magnetic field and spin-orbit interactions on the magnetic moment and susceptibility.