Effect of rare-earth doping on the electrical properties of InSe single crystals

Abstract

The effect of rare-earth doping (R = Gd, Dy, Ho) to different levels (0, 10−5, 10−4, 10−3, 10−2, and 10−1 at %) on threshold switching and low-frequency current oscillations in single crystals of indium selenide, a layered III–VI semiconductor, has been studied in broad ranges of temperatures (77–400 K), wavelengths (0.30–3.50 μm), and illuminances (up to ∼102 lx). The results are interpreted in terms of the anisotropic chemical bonding in n-InSe and its response to rare-earth doping.