Effect of rapid thermal processing on copper precipitation in p/p+ silicon epitaxial wafers with heavily boron-doped substrates

Abstract

The effect of rapid thermal processing (RTP) on the formation of copper precipitation in p/p+ silicon (Si) epitaxial wafers was systematically investigated by defect etching and optical microscopy. After RTP preannealing at high temperature (1250 °C/60 s, with cooling rate 30 K/s) followed by the 750 °C/8 h + 1050 °C/16 h low-high (L-H) two-step annealing, it was revealed that the bulk microdefects were found only inside the p+ substrate, manifesting no defects generated in the epitaxial layer. However, it was found that the width of denude zone (DZ) in samples only subjected to L-H two-step annealing was narrower than that of epitaxial layer, which meant that oxygen precipitation was formed in epitaxial layer. It can be concluded that RTP was beneficial to the formation of DZ. Additionally, it was found that the width of DZ has a sharp dependence on the introducing temperature of copper contamination, that is, the corresponding equilibrium concentration of interstitial copper in the Si influence the thermodynamics and kinetics process of the formation of copper precipitation significantly.