Abstract
The effect of rapid thermal annealing (temperature 600–800°C; duration 2 min) on the forward current-voltage characteristics of 4H-SiC Schottky diodes is studied. Tungsten, nickel, chromium, and molybdenum deposited by electron-beam sputtering in vacuum are used as the Schottky-contact metals. Dissimilar types of influence exerted by the thermal treatment on the barrier height and scatter of the contact parameters, which characterize the degree of their uniformity, are found for different metals.
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