Abstract
A statistical model of random defect density fluctuations is proposed to determine the Fermi level distribution in compensated semiconductors. The model is based on the assumption for Gaussian defect distribution. It is shown that highly compensated materials convert into multi-component systems, containing regions with different types of conductivity. Thus an effective potential barrier in the sample appears, which is related to the degree of compensation. It is shown that this model is appropriate for materials which contain inhomogeneously distributed shallow as well as deep levels. The model is illustrated for the case of semi-insulating GaAs:Cr at 300 K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
