Abstract
Carbon-doped SiO 2 (SiOC), a low dielectric constant (low- k) material was integrated with copper to fabricate Cu–SiOC single damascene test structures. Dielectric leakage between metal lines was assessed by voltage ramp method. This work is to investigate the effect of voltage ramp ( V ramp) rate on the dielectric breakdown and leakage mechanism of Cu–SiOC interconnects with different metal widths and spaces. Breakdown field ( ξ BD) was found to increase as the ramp rate was increased; median charge to breakdown ( Q BD) decreased as the ramp rate was increased. At any given ramp rate Q BD was almost constant for different interline spaces, and this was correlated; this median Q BD was found to be linear with that obtained from time-dependent dielectric breakdown (TDDB) tests. This provides the possibility of using accelerated ramp results to predict the long-term reliability; hence, Q BD from V ramp can be used as a failure criterion to assess dielectric reliability.
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