Abstract
The effect of damage on 1.54 μm luminescence for 30 keV-Er-implanted SiO 2 films has been studied by positron annihilation and cathodoluminescence. It was found that S-parameter in the films decreased after implantation, indicating the suppression of positronium formation. The luminescence appeared with the recovery of the S-parameter after 600°C annealing. The intensity reached a maximum at 900°C annealing whereas the S-parameter did not change significantly. It seems that most damages recover at 600°C and thereafter Er ions transform to an optically active state at 900°C.
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