Abstract
The influence of the radial energy distribution on the formation of ion tracks is investigated by track etching in amorphous metallic Fe 81B 13.5Si 3.5C 2. An etching threshold of almost 4 leV/Å is observed for high energy ions (Au, 35 MeV/u), which is slightly higher than the threshold of 3.6 keV/Å of low energy ions (Xe, 6.1 MeV/u). In the frame of the thermal-spike model, the track radius is calculated as a function of the ion energy loss. For a given energy loss, the model predicts a small increase of the etching threshold as a function of the ion energy, in agreement with the experimental results.
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