Abstract
The integration on silicon of light sources emitting in the 2-5 µm wavelength range for sensing applications is currently under the focus of attention. In this work we have studied the influence of the quantum well number (from 1 to 4 QWs) on the performances of GaSb-based laser diodes grown on silicon and emitting at 2.3 µm. We have observed that – somewhat counterintuitively – the best performances in terms of threshold current and internal losses are achieved with 1 QW. The results will be discussed in comparison with similar laser diodes grown on native GaSb substrates.
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