Abstract
The synthesis and characterization of PVA (Poly Vinyl Acetate) doped bulk MgB 2 superconductor is reported here. PVA is used as a carbon source. PVA doping effects made two distinguishable contributions: first enhancement of J c field performance and second an increase in H c2 value, both because of carbon incorporation into MgB 2 crystal lattice. The susceptibility measurement reveals that T c decreased from 37 to 36 K. Lattice parameter ‘ a’ decreased from 3.085 Å to 3.081 Å due to the partial substitution of carbon at boron site. PVA doped sample exhibited the J c values greater than 10 5 A/cm 2 at 5 and 10 K at low fields; which is almost 3 times higher than the pure one, while at high fields the J c is increased by an order of magnitude in comparison to pure MgB 2. From ρ( T) H measurements we found higher T c values under magnetic field for doped sample; indicating an increase in H c2. Also the magnetization measurements exhibited a significant enhancement in H irr value. The improved performance of PVA doped MgB 2 can be attributed to the substitution of carbon at boron site in parent MgB 2 and the resulting impact on the carrier density and impurity scattering. The improved flux pinning behavior could easily be seen from reduced flux pinning force plots.
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