Abstract
An analytical model of the interaction of macroparticle (MP) with vacuum arc plasma in plasma immersion ion implantation (PIII) is presented. The proposed model is based on combination of the theory of charge dynamics of MP and sheath model for PIII. In the framework of this model, the MP charge dynamics during voltage pulse as well as during interval between pulses is investigated. It is obtained that MP charge and MP behavior depend on pulsed bias parameters such as pulse duration, duty cycle and bias amplitude. It is shown that pulsed substrate biasing is effective method to control of the MPs in plasma processing.
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