Abstract
The synthesis of n-type phosphorus-doped diamond is essential for the development of diamond-based bipolar devices. Although demonstrated 20 years ago, it remains a complex problem due to low incorporation efficiency and low maximum concentrations. Previous works showed the deleterious influence of methinophosphide formation in a methane/hydrogen/phosphine plasma on the growth of phosphorous doped diamond using the chemical vapor deposition method. In this work, we investigate the effect of pulsing methane during microwave plasma enhanced chemical vapor deposition to avoid the formation of HCP and to increase phosphorus incorporation efficiency and maximum concentration in diamond.
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