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Abstract
Reduction graphene oxide (r-GO) lines on graphene oxide (GO) films can be prepared by a photocatalytic reduction and photothermal reduction method. A mechanism of partial GO reduction by pulsed photon energy is identified for preparing patterned rGO-GO films. The photocatalytic reduction method efficiently reduces GO at low photon energies. The successful production of a patterned rGO-GO film without damage by the photo thermal reduction method is possible when an energy density of 6.0 or 6.5 J/m2 per pulse is applied to a thin GO film (thickness: 0.45 μm). The lowest resistance obtained for a photo-reduced rGO line is 0.9 kΩ sq−1. The GO-TiO2 pattern fabricated on the 0.23 μm GO-TiO2 composite sheet through the energy density of each pulse is 5.5 J/m2 for three pulses.
Highlights
In recent years, decreasing the through silicon via (TSV) size has caused a rapid increase in the aspect ratio (AR) during pitching in technology nodes below 10 nm [1], resulting in poor film coverage of barrier/seed layers owing to thermomechanical stress [2]
Problematic resistance (R)–capacitance (C) delays with increased resistance caused the boundary scattering and shorter mean free paths that result from using nano-thick copper as a reasonable material for interconnections [3,4,5]
The graphene line should be used as a substrate and line by controlling the electric properties by patterning the graphene
Summary
In recent years, decreasing the through silicon via (TSV) size has caused a rapid increase in the aspect ratio (AR) during pitching in technology nodes below 10 nm [1], resulting in poor film coverage of barrier/seed layers owing to thermomechanical stress [2]. Photo catalysis produces a hole (h+) in the valance band and electron (e−) in the conduction band when it absorbs the photon energy above the bond gap. This results in a strong reduction-oxidation reaction. We aim make the graphene line damage free by understanding pulsed energy and the photo catalyst reaction [25,30,31,32,33,34,35]. A patterning technique is proposed to produce rGO lines on GO films using irradiated pulsed energy and photo catalyst reaction. It is necessary to determine the optimal pulsed energy density to minimize rGO line defects and decrease the resistance of the obtained rGO lines
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